Distinguishing step relaxation mechanisms via pair correlation functions

Theoretical predictions of coupled step motion are tested by direct STM measurement of the fluctuations of near-neighbor pairs of steps on Si(111)-root3 x root3 R30 - Al at 970K. The average magnitude of the pair-correlation function is within one standard deviation of zero, consistent with uncorrelated near-neighbor step fluctuations. The time dependence of the pair-correlation function shows no statistically significant agreement with the predicted t^1/2 growth of pair correlations via rate-limiting atomic diffusion between adjacent steps. The physical considerations governing uncorrelated step fluctuations occurring via random attachment/detachment events at the step edge are discussed.Comment: 17 pages, 4 figure

Regulation of amylase expression in Aspergillus nidulans

We report the secretion of amylase by A. nidulans R153 and repression of its expression by various carbon sources

Origin of the Mosaicity in Graphene Grown on Cu(111)

We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally misaligned with the substrate, generating grain boundaries upon interisland impingement. New rotational boundaries are also generated as graphene grows across substrate step bunches. Thus, rougher substrates lead to higher degrees of mosaicity than do flatter substrates. Increasing the growth temperature improves crystallographic alignment. We demonstrate that graphene growth on Cu(111) is surface diffusion limited by comparing simulations of the time evolution of island shapes with experiments. Islands are dendritic with distinct lobes, but unlike the polycrystalline, four-lobed islands observed on (100)-textured Cu foils, each island can be a single crystal. Thus, epitaxial graphene on smooth, clean Cu(111) has fewer structural defects than it does on Cu(100).Comment: Article revised following reviewer comment

Real-time observation of epitaxial graphene domain reorientation.

Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, 'ripening'; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV per C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene-substrate interaction reproduces the results. This work suggests new strategies for improving the van der Waals epitaxy of 2D materials

Defect Formation and Kinetics of Atomic Terrace Merging

Pairs of atomic scale terraces on a single crystal metal surface can be made to merge controllably under suitable conditions to yield steps of double height and width. We study the effect of various physical parameters on the formation of defects in a kinetic model of step doubling. We treat this manifestly non- equilibrium problem by mapping the model onto a 1-D random sequential adsorption problem and solving this analytically. We also do simulations to check the validity of our treatment. We find that our treatment effectively captures the dynamic evolution and the final state of the surface morphology. We show that the number and nature of the defects formed is controlled by a single dimensionless parameter $q$. For $q$ close to one we show that the fraction of defects rises linearly with $\epsilon \equiv 1-q$ as $0.284 \times \epsilon$. We also show that one can arrive at the final state faster and with fewer defects by changing the parameter with time.Comment: 17 pages, 8 figures. To be submitted to Phys. Rev.

Diffusional Relaxation in Random Sequential Deposition

The effect of diffusional relaxation on the random sequential deposition process is studied in the limit of fast deposition. Expression for the coverage as a function of time are analytically derived for both the short-time and long-time regimes. These results are tested and compared with numerical simulations.Comment: 9 pages + 2 figure